Comparative Study of Performance of SiC SJ-MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth-Reference-Cited by-同舟云学术

Comparative Study of Performance of SiC SJ-MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth

Published:2022-05-22 Issue: Volume: Page:
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Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Sometani Mitsuru¹,Oozono Kunihide¹,Ji Shiyang¹,Morimoto Tadao¹,Kato Tomohisa¹,Kojima Kazutoshi¹,Harada Shinsuke¹

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST),Advanced Power Electronics Research Center (ADPERC),Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813641.pdf?arnumber=9813641

Reference13 articles.

1. Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

2. Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

3. Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process

4. Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices

5. First Demonstration of Dynamic Characteristics for SiC Superjunction MOSFET Realized using Multi-epitaxial Growth Method

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1. Comparison of electronic stopping cross sections for channeled implantation of Al ions between the 〈0001〉 and 〈11 2¯ 3〉 directions in 4H-SiC;Japanese Journal of Applied Physics;2024-01-01

2. An UMOSFET integrated with graded semi-super-junction and 3C/4H–SiC hetero-crystalline freewheeling junction;Microelectronics Journal;2023-12

3. Development of SiC Superjunction MOSFET: A Review;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

4. Re-evaluation of energy dependence of electronic stopping cross-section for Al ions into 4H-SiC (0001);Japanese Journal of Applied Physics;2022-11-01