Development of SiC Superjunction MOSFET: A Review
Author:
Affiliation:
1. Research Institute of Fudan University in Ningbo,Zhejiang,P.R. China,315336
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10070854/10070925/10071020.pdf?arnumber=10071020
Reference26 articles.
1. A comparative study of a deep-trench superjunction SiC VDMOS device
2. A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile
3. First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method
4. Development of SiC super-junction (SJ) devices by multi-epitaxial growth;kosugi;Silicon Carbide and Related Materials,2013
5. Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS
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