Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Cited by
3 articles.
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1. A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance;Journal of Semiconductors;2023-05-01
2. Development of SiC Superjunction MOSFET: A Review;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07
3. Temperature sensitive analytical analysis of gate‐stack dual metal nanowire field‐effect transistor (
4H‐SiC
);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-09-16