SILICON-ON-INSULATOR MESFETS AT THE 45NM NODE-Reference-Cited by-同舟云学术

SILICON-ON-INSULATOR MESFETS AT THE 45NM NODE

Published:2012-03 Issue:01 Volume:21 Page:1250012
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

LEPKOWSKI WILLIAM¹,WILK SETH J.¹,GHAJAR M. REZA²,PARSI ANURADHA²,THORNTON TREVOR J.²

Affiliation:

1. SJT Micropower Inc., 16411 N. Skyridge Lane, Fountain Hills, AZ 85268-1515, USA

2. School of Electrical, Computer and Energy Engineering, Arizona State University, PO Box 876206, Tempe, AZ 85287-6206, USA

Abstract

Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (IDSAT≥ 100mA/mm ), high operating frequency (fmax> 35 GHz ) or enhanced breakdown voltage (VBD> 25 V ). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156412500127

Reference25 articles.

1. SILICON-BASED INTEGRATED MOSFETS AND MESFETS: A NEW PARADIGM FOR LOW POWER, MIXED SIGNAL, MONOLITHIC SYSTEMS USING COMMERCIALLY AVAILABLE SOI

2. Total dose radiation response of CMOS compatible SOI MESFETs

3. CMOS-Compatible SOI MESFETs With High Breakdown Voltage

4. Large-signal modeling of SOI MESFETs

5. SOI MESFETs Fabricated Using Fully Depleted CMOS Technologies

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