Large-signal modeling of SOI MESFETs-Reference-Cited by-同舟云学术

Large-signal modeling of SOI MESFETs

Published:2006-06 Issue:6 Volume:50 Page:943-950
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Balijepalli A.,Vijayaraghavan R.,Ervin J.,Yang J.,Islam S.K.,Thornton T.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. SOI technology for the GHz Era;Shahidi;IBM J Res Dev,2002

2. SOI CMOS technology for RF system-on-chip applications;Yue;Microwave J,2002

3. Pelella MM et al. Advantages and challenges of high performance CMOS on SOI. In: Proceedings of the IEEE international SOI conference, Durango, CO, 2001. p. 1–4.

4. Electrical characterization of SOI materials and devices;Cristoloveanu,1995

5. Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films;Vu;Electron Lett,1987

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