Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films-Reference-Cited by-同舟云学术

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Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films

Published:1987 Issue:7 Volume:23 Page:354
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Vu D.P.,Sono A.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19870261?crawler=true&mimetype=application/pdf

Reference10 articles.

1. Haond, M., Dutartre, D., and Bensahel, D.: ‘Light beam induced recrystallisation of SOI films’, Nguyen, V.T., Cullis, A.G., Energy beam-solid interactions and transient thermal processing 1985, (Les Editions de Physique p. 417–426

2. Electrical Characterization of Beam—Recrystallized Soi Structures Using a Depletion Mode Transistor

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1. Impact Ionization in SOI MESFETs at the 32-nm Node;IEEE Transactions on Electron Devices;2016-10

2. SILICON-ON-INSULATOR MESFETS AT THE 45NM NODE;International Journal of High Speed Electronics and Systems;2012-03

3. Scaling SOI MESFETs to 150-nm CMOS Technologies;IEEE Transactions on Electron Devices;2011-06

4. Silicon on insulator MESFETs for RF amplifiers;Solid-State Electronics;2010-03

5. SILICON-BASED INTEGRATED MOSFETS AND MESFETS: A NEW PARADIGM FOR LOW POWER, MIXED SIGNAL, MONOLITHIC SYSTEMS USING COMMERCIALLY AVAILABLE SOI;Frontiers in Electronics;2006-08

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