Electrical Characterization of Beam—Recrystallized Soi Structures Using a Depletion Mode Transistor

Abstract

ABSTRACTWe show that a depletion mode transistor is a very versatile tool for the electrical characterization of SOI structures. We apply it to Si thin films recrystallized by a zone—melting technique in which grainboundaries are localized. Apart from the transportparameters, one can get from drain—source current the information usually determined from a MOS capacitor. Owing to the existence in such a transistor of two MOS structures, we are able to characterize both Si-SiO2 interfaces as well as the “bulk” of the Si film.