SILICON-BASED INTEGRATED MOSFETS AND MESFETS: A NEW PARADIGM FOR LOW POWER, MIXED SIGNAL, MONOLITHIC SYSTEMS USING COMMERCIALLY AVAILABLE SOI-Reference-Cited by-同舟云学术

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SILICON-BASED INTEGRATED MOSFETS AND MESFETS: A NEW PARADIGM FOR LOW POWER, MIXED SIGNAL, MONOLITHIC SYSTEMS USING COMMERCIALLY AVAILABLE SOI

Published:2006-08 Issue: Volume: Page:
ISSN:
Container-title:Frontiers in Electronics
language:
Short-container-title:

Author:

YANG JINMAN¹,BALIJEPALLI ASHA¹,THORNTON TREVOR J.¹,VANDERSAND JAMES²,BLALOCK BENJAMIN J.²,WOOD MICHAEL E.³,MOJARRADI MOHAMMAD M.⁴

Affiliation:

1. Arizona State University, Dept. of Electrical Engineering, PO Box 876206, Tempe, AZ 85287-6206, USA

2. The University of Tennessee, Dept. of Electrical and Computer Engineering, Knoxville, TN 37996-2100, USA

3. SPAWAR Systems Center – Code 2876, 49375 Ashburn Rd, San Diego, CA 92152-7633, USA

4. Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Mail Stop 303-300, Pasadena CA 91109-8099, USA

Publisher

WORLD SCIENTIFIC

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Common Source Amplifier Circuit using Gate Stack-Based GAA Dopingless Nanowire Field Effect Transistor;ECS Journal of Solid State Science and Technology;2022-08-01

2. High Breakdown Voltage MESFETs Integrated with SOI CMOS Technologies;2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S);2019-10-14

3. Avalanche breakdown in SOI MESFETs;Solid-State Electronics;2014-01

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