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CMOS-Compatible MESFETs for High Power RF Integrated Circuits

  • Published:2019-02 Issue:1 Volume:32 Page:14-22
  • ISSN:0894-6507
  • Container-title:IEEE Transactions on Semiconductor Manufacturing
  • language:
  • Short-container-title:IEEE Trans. Semicond. Manufact.

Author:

Mehr PayamORCID,Moallemi SoroushORCID,Zhang Xiong,Lepkowski William,Kitchen JenniferORCID,Thornton Trevor J.ORCID

Funder

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications;Micromachines;2023-12-30

2. A Review of Hybrid Supply Modulators in CMOS Technologies for Envelope Tracking PAs;IEEE Transactions on Power Electronics;2023-05

3. A Linearity Enhancement Technique for Envelope Tracked Cascode Power Amplifiers;2020 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS);2020-05

4. Adaptive Power Control Using Current Adjustment for Watt-Level Power Amplifiers in CMOS SOI;IEEE Transactions on Circuits and Systems II: Express Briefs;2020-04

5. High Breakdown Voltage MESFETs Integrated with SOI CMOS Technologies;2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S);2019-10-14
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