TRANSPORT IN A POLARIZATION-INDUCED 2D ELECTRON GAS-Reference-Cited by-同舟云学术

TRANSPORT IN A POLARIZATION-INDUCED 2D ELECTRON GAS

Published:2001-06 Issue:02 Volume:11 Page:479-509
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

RIDLEY B. K.¹,ZAKHLENIUK N. A.²

Affiliation:

1. Department of Electronic Systems Engineering, University of Essex, Colchester, UK

2. Caswell Technology, Marconi Caswell, Towcester, Northamptonshire, UK

Abstract

AlGaN/GaN structures constitute a new class of 2D systems in that a large population of electrons can be produced without doping as a result of spontaneous and strain-induced polarization. Electron transport can, in principle, be mediated solely by phonon scattering and, for the first time, it is possible to realistically envisage the formation of a drifted Maxwellian or Fermi-Dirac distribution in hot-electron transport. We first describe a simple model that relates electron density in a heterostructure to barrier width and then explore electron-electron (e-e) energy and momentum exchange in some depth. We then illustrate the novel hot-electron transport properties that can arise when only phonon and e-e scattering are present. These include S-type NDR, electron cooling and squeezed electrons.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156401000927

Reference14 articles.

1. Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors

2. 75 Å GaN channel modulation doped field effect transistors

3. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

4. The polarization-induced electron gas in a heterostructure

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