Effect of strain on the effective mass of GaN and the mobility of AlGaN/GaN two-dimensional electron gas-Reference-Cited by-同舟云学术

Effect of strain on the effective mass of GaN and the mobility of AlGaN/GaN two-dimensional electron gas

Published:2023-06 Issue: Volume:35 Page:105788
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Cao Yuelong,Guan Qi,Jia Wanli^ORCID,Wang Xinmei,Zhang Lin,He Yang,Li Enling

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference42 articles.

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2. Comyn. R., Chenot. S., Alouani. W.E., et al. AlGaN/GaN/AlGaN DH-HEMTs Grown on a patterned silicon substrate. Physica Status Solidi (a). 215 (9) (2018) 1700642.1–1700642.6. https://doi.org/10.1002/pssa.201700642.

3. Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures;Broas;Microelectron. Reliab.,2016

4. Driving technology of GaN HEMT and its application;Wang;J. Xi' Univ. Sci. Technol.,2016

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1. Strain-induced enhancement of 2D electron gas density in AlGaN/GaN heterojunction: a first-principles study;Journal of Physics D: Applied Physics;2024-01-17

2. Thermal transport and phonon localization in periodic h-GaN/h-AlN superlattices;Journal of Physics: Condensed Matter;2023-10-26

3. Strain effect on the performance of proton-irradiated GaN-based HEMT;Applied Physics A;2023-04-25