Carrier mobility versus carrier density inAlxGa1−xN/GaNquantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.035335/fulltext
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1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
3. Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
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