STUDY OF THE GATE INSULATOR/SILICON INTERFACE UTILIZING SOFT AND HARD X-RAY PHOTOELECTRON SPECTROSCOPY AT SPring-8-Reference-Cited by-同舟云学术

STUDY OF THE GATE INSULATOR/SILICON INTERFACE UTILIZING SOFT AND HARD X-RAY PHOTOELECTRON SPECTROSCOPY AT SPring-8

Published:2006-03 Issue:01 Volume:16 Page:353-364
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

HATTORI T.¹,NOHIRA H.²,AZUMA K.³,SAKAI K. W.⁴,NAKAJIMA K.⁴,SUZUKI M.⁴,KIMURA K.⁴,SUGITA Y.⁵,IKENAGA E.⁶,KOBAYASHI K.⁶,TAKATA Y.⁷,KONDO H.⁸,ZAIMA S.⁸

Affiliation:

1. Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan

2. Musashi Institute of Technology, Tokyo, 158-8557, Japan

3. Musashi Advanced LCD Technologies Development Center Co., Ltd., Yokohama, 244-0817, Japan

4. Kyoto University, Kyoto 606-8501, Japan

5. Fujitsu Laboratories Ltd., Atsugi 243-0197, Japan

6. JASRI/Spring-8, Hyogo, 679-5198, Japan

7. RIKEN/Spring-8, Hyogo, 679-5148, Japan

8. Nagoya University, Nagoya 464-8603, Japan

Abstract

The chemical structures of SiO 2/ Si interfaces were studied by photoelectron spectroscopy using high-brilliance soft X-ray with photon energy ranging from 500 to 1500 eV at Super Photon ring 8 GeV(SPring-8) and it is able to probe a depth of about 1.2 to 3 nm with energy resolution of 100 meV. On the other hand, high-brilliance hard X-ray with photon energy ranging from 6 to 10 keV is able to probe a depth of about 8.5 to 12.5 nm with energy resolution of 100 meV. Hard photoelectron spectroscopy are particularly useful for studying the composition and the chemical structure of transition layer at high-k dielectric/silicon interface.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156406003680

Reference20 articles.

1. Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide films

2. Microscopic structure of theSiO2/Si interface

3. Optical absorption in ultrathin silicon oxide films near theSiO2/Si interface

4. Electron escape depth variation in thin SiO2 films measured with variable photon energy

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