1/f CHANNEL NOISE AT HIGH DRAIN CURRENT IN MOS TRANSISTORS

Abstract

On account of low resistivity contacts and of a newly developed device, the investigation of the 1/f noise at high drain current has been made possible. Therefore, it has been acknowledged that the correlated carrier number and mobility fluctuations model were not able to satisfactorily explain the 1/f noise within this particular region. Indeed, the fundamental mobility fluctuations were also generating 1/f fluctuations and were furthermore, taking over at high biases. It eventually came to light that the fundamental mobility fluctuations along with the sole oxide charge fluctuations were accurately modeling the noise all over the measurement range, allowing us to notice that the fundamental mobility fluctuations were generating the same amount of 1/f fluctuations as the induced mobility added to the cross correlated ones.