Performance Improvement by Blanket Boron Implant in the Sigma-Shaped Trench Before the Embedded SiGe Source/Drain Formation for 28-nm PMOSFET
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Published:2020-06
Issue:6
Volume:41
Page:796-799
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Li Zhong-Hua,
Li Run-Ling,
Jiang Yu-LongORCID,
Zhang Yan-Wei,
Cao Yong-Feng,
Wang Xue-Jiao
Funder
Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials