Impact of silicidation on the excess noise behaviour of mos transistors-Reference-Cited by-同舟云学术

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Impact of silicidation on the excess noise behaviour of mos transistors

Published:1995-11 Issue:11 Volume:38 Page:1893-1897
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Vandamme E.P,Vandamme L.K.J,Claeys C,Simoen E,Schreutelkamp R.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. noise in series resistance of LDD MOSTs

2. A new method for measuring the saturation velocity of submicron CMOS transistors

3. Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET's

4. An explanation of noise in LDD MOSFETs from the ohmic region to saturation

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