Low frequency noise investigation of n-MOSFET single cells for memory applications

Author:

Ioannidis E.G.,Leisenberger F.P.,Enichlmair H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. McWhorter AL. Semiconductor surface physics. In: Kingston H, editor. Philadelphia, PA, USA: Univ. Pennsylvania Press; 1957. p. 207.

2. Noise as a diagnostic tool for semiconductor material and device characterization;Claeys;J Electrochem Soc,1998

3. Fukuda Masatoshi, Nakanishi Toshiro, Nara Yasuo. Scaled 2bit/cell SONOS type nonvolatile memory technology for sub-90nm embedded application using SiN sidewall trapping structure. IEEE international electrons device meeting; 2003. p. 37.5.1–4.

4. Low-frequency noise characteristics in SONOS flash memory with vertically stacked nanowire FETs;Bang;IEEE Electron Dev Lett,2017

5. Low-frequency noise in SONOS-TFT with a trigate nanowire structure under program/erase operation;Hu;IEEE Electron Dev Lett,2012

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