State-of-the-art low frequency noise performance of n-MOSFET for analog/RF applications

Author:

Ioannidis E.G.,Rohracher K.,Enichlmair H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. CMOS technology characterization for analog and RF design;Razavi;IEEE J Solid-State Circuits,1999

2. Leach WM. Fundamentals of low-noise analog circuit design. Proc IEEE Oct. 1994;82(10):1515–1538.

3. New processes and technologies to reduce the low-frequency noise of digital and analog circuits;Gaubert;Open access Intech,2016

4. https://www.google.com/url?sa=t&rct=j&q=&esrc=s&source=web&cd=1&ved=2ahUKEwi5wt_im5HkAhUNz4UKHV-WCvMQFjAAegQIARAC&url=https%3A%2F%2Fwww.electronicsdatasheets.com%2Fdownload%2F52cfe121e34e24cc6d56abd5.pdf%3Fformat%3Dpdf&usg=AOvVaw3L7aTxfpMdw_Ax9I1H30m7.

5. Ioannidis EG, et al. Low frequency noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors. 2011 international electron devices meeting, Washington, DC, 2011, pp. 18.6.1–18.6.4.

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