Effects of Nitrogen Gas Flow and Film Thickness on Electric Properties of TiN Thin Film Deposited at Room Temperature

Abstract

In this study, TiN thin film was deposited onto a glass substrate by the inclined opposite target type DC magnetron sputtering method with the good electric characteristics. The coating of TiN thin film was carried out onto substrate at the temperature of 303 K. The effects of nitrogen gas flow and film thickness on transparency, electric resistivity and electromagnetic wave shielding effectiveness of TiN thin films were discussed. The experimental results obtained were summarized as follows: (1) The TiN thin film deposited at the room temperature showed very low electric resistivity of 8.8×10-5Ω.cm. The TiN film showed the crystal structure when the depositing time was over 20 min. (2) When the film thickness of TiN was very thin, the TiN thin film was transparent for the visible light. The electric resistivity decreased with increasing the deposition time. (3) The electric resistivity and the transparency of TiN thin film depended greatly on the nitrogen gas flow.