Cathodoluminescence study of nonuniformity in hydride vapor phase epitaxy-grown thick GaN films
Author:
Publisher
Oxford University Press (OUP)
Subject
Instrumentation
Link
http://academic.oup.com/jmicro/article-pdf/61/1/25/5856199/dfr093.pdf
Reference16 articles.
1. Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates
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5. Thermal and Electrical Properties of High-Quality Freestanding GaN Wafers with High Carrier Concentration
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2. Wafer-scale analysis of GaN substrate wafer by imaging cathodoluminescence;Applied Physics Express;2019-04-09
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