Wafer-scale analysis of GaN substrate wafer by imaging cathodoluminescence
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab0db8/pdf
Reference20 articles.
1. Wide-bandgap semiconductor materials: For their full bloom
2. AlGaN/GaN HEMTs-an overview of device operation and applications
3. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
4. Vertical Power p-n Diodes Based on Bulk GaN
5. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
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1. Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown m ‐Plane GaN Substrate;physica status solidi (a);2021-06-06
2. Analysis of mechanically induced subsurface damage and its removal by chemical mechanical polishing for gallium nitride substrate;Precision Engineering;2021-01
3. Quantitative defect analysis in MOCVD GaN-on-GaN using cathodoluminescence;Optics Express;2020-08-25
4. Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes;Journal of Electronic Materials;2020-03-26
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