Cathodoluminescence study of killer defects in GaN wafers on sapphire substrates-Reference-Cited by-同舟云学术

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Cathodoluminescence study of killer defects in GaN wafers on sapphire substrates

Published:2017-06-23 Issue:7 Volume:14 Page:1700054
ISSN:1862-6351
Container-title:physica status solidi c
language:en
Short-container-title:Phys. Status Solidi C

Author:

Sekiguchi Takashi¹,Lee Woong¹,Luo Xianjia¹,Kimura Takashi¹,Cho Yujin¹

Affiliation:

1. International Center for Materials Nanoarchitectonics (MANA)National Institute for Materials Science1‐1 NamkiTsukuba 305‐0044Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700054

Reference11 articles.

1. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

2. Characterization of threading dislocations in GaN epitaxial layers

3. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

4. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

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1. The effect of lateral growth of self-assembled GaN microdisks on UV lasing action;Nano Research;2023-07-18

2. Parasitic p–n junctions formed at V-pit defects in p-GaN;Journal of Applied Physics;2021-04-21

3. Intraband Cooling in All‐Inorganic and Hybrid Organic–Inorganic Perovskite Nanocrystals;Advanced Functional Materials;2019-07-17

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