Parasitic p–n junctions formed at V-pit defects in p-GaN-Reference-Cited by-同舟云学术

Parasitic p–n junctions formed at V-pit defects in p-GaN

Published:2021-04-21 Issue:15 Volume:129 Page:155702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Vergeles P. S.¹^ORCID,Yakimov E. B.¹²^ORCID,Polyakov A. Y.²,Shchemerov I. V.¹,Chernykh A. V.¹^ORCID,Vasilev A. A.¹,Kochkova A. I.¹,Lee In-Hwan³^ORCID,Pearton Stephen J.⁴^ORCID

Affiliation:

1. Institute of Microelectronics Technology RAS, Chernogolovka 142432, Russia

2. School of Advanced Materials Engineering and Research Center of Advanced Materials Development, National University of Science and Technology MISiS, Moscow 119049, Russia

3. Department of Materials Science and Engineering, Korea University, Anamro 145, Seoul 02841, Korea

4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

Ministry of Science and Higher Education of the Russian Federation

Ministry of Trade, Industry and Energy

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0047742

Reference32 articles.

1. Background Story of the Invention of Efficient InGaN Blue-Light-Emitting Diodes (Nobel Lecture)

2. Power GaN Devices: Materials, Applications and Reliability, edited by M. Meneghini, G. Meneghesso, and E. Zanoni (Springer International Publishing, 2017), p. 379.

3. Recombination properties of dislocations in GaN

4. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency

5. Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

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