Recombination properties of dislocations in GaN-Reference-Cited by-同舟云学术

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Recombination properties of dislocations in GaN

Published:2018-04-28 Issue:16 Volume:123 Page:161543
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yakimov Eugene B.¹²^ORCID,Polyakov Alexander Y.¹,Lee In-Hwan³,Pearton Stephen J.⁴^ORCID

Affiliation:

1. National University of Science and Technology MISiS, Moscow 119049, Russia

2. Institute of Microelectronics Technology RAS, Chernogolovka 142432, Russia

3. Department of Materials Science and Engineering, Korea University, Anamro 145, Seoul 02841, South Korea

4. University of Florida, Gainesville, Florida 32611, USA

Funder

DOD | Defense Threat Reduction Agency

National Research Foundation of Korea

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4995580

Reference43 articles.

1. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

2. III–nitrides: Growth, characterization, and properties

3. Electron-beam-induced-current study of defects in GaN; experiments and simulation

4. High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers

5. Correlation between the surface defect distribution and minority carrier transport properties in GaN

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1. Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid;Journal of Applied Physics;2023-11-15

2. Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis;The Journal of Physical Chemistry Letters;2023-07-20

3. An Experimental Study of Dislocation Dynamics in GaN;Micromachines;2023-06-02

4. Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces;Materials;2023-04-27

5. Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n⁺-GaN Schottky contacts;Semiconductor Science and Technology;2022-08-19

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