Correlation between the surface defect distribution and minority carrier transport properties in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122790
Reference15 articles.
1. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
2. GaN based transistors for high temperature applications
3. Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
4. Progress and prospects of group-III nitride semiconductors
5. Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz
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