Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold-Reference-Cited by-同舟云学术

Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold

Published:2016-10-28 Issue:16 Volume:120 Page:165704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Griffiths James T.¹^ORCID,Zhang Siyuan¹,Lhuillier Jeremy¹^ORCID,Zhu Dandan¹,Fu Wai Yuen²,Howkins Ashley³^ORCID,Boyd Ian³^ORCID,Stowe David⁴,Wallis David J.¹,Humphreys Colin J.¹^ORCID,Oliver Rachel A.¹^ORCID

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom

2. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong

3. Experimental Techniques Centre, Brunel University, Uxbridge UB8 7BQ, United Kingdom

4. Gatan UK, 25 Nuffield Way, Abingdon, Oxon OX14 1RL, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

European Research Council (ERC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4965989

Reference54 articles.

1. Solid-State Lighting

2. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

3. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

4. Auger recombination in InGaN measured by photoluminescence

5. On the importance of radiative and Auger losses in GaN-based quantum wells

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