High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=48/a=379/pdf
Reference13 articles.
1. What information on extended defects do we obtain from beam-injection methods?
2. EBIC defect characterisation: state of understanding and problems of interpretation
3. Electron Hall mobility of n‐GaN
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