A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF4-H2-He PECVD
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.epjap.org/10.1051/epjap:2004032/pdf
Reference21 articles.
1. Inverter made of complementary p and n channel transistors using a single directly deposited microcrystalline silicon film
2. Microcrystalline silicon solar cells fabricated on polymer substrate
3. Deposition of amorphous silicon films by hot-wire chemical vapor deposition
4. The role of hydrogen in the formation of microcrystalline silicon
5. Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties
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1. Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions;Materials;2021-11-17
2. Advanced nanocrystallinity with widened optical gap realized via microstructural control in P-doped silicon oxide thin films used as window layer in nc-Si solar cells;Materials Chemistry and Physics;2020-03
3. Double-pulsed PECVD synthesis of hydrogenated nanocrystalline silicon thin films;SPIE Proceedings;2012-10-10
4. Gas-phase chemistry of ionized and protonated GeF4: a joint experimental and theoretical study;Journal of Mass Spectrometry;2011-04-13
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