Inverter made of complementary p and n channel transistors using a single directly deposited microcrystalline silicon film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124617
Reference10 articles.
1. In-SituChemically Cleaning Poly-Si Growth at Low Temperature
2. Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote plasma chemical vapor deposition using SiF4/H2
3. Transistors With a Profiled Active Layer Made by Hot-Wire CVD
4. Mechanism of the growth of microcrystalline silicon
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