Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote plasma chemical vapor deposition using SiF4/H2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112937
Reference11 articles.
1. High performance low-temperature poly-Si n-channel TFTs for LCD
2. Self Organized Grain Growth Larger than 1 µm through Pulsed-Laser-Induced Melting of Silicon Films
3. Structural properties of polycrystalline silicon films prepared at low temperature by plasma chemical vapor deposition
4. Phosphine Doping Effects in the Plasma Deposition of Polycrystalline Silicon Films
5. In-SituChemically Cleaning Poly-Si Growth at Low Temperature
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