High performance of full swing logic inverter using all n-types amorphous ZnSnO and SiZnSnO thin film transistors
Author:
Affiliation:
1. Department of Semiconductor Engineering, Cheongju University, Cheongju, Chungbuk 360-764, South Korea
Funder
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/apl/106/21/1.4921791.pdf?itemId=/content/aip/journal/apl/106/21/10.1063/1.4921791&mimeType=pdf&containerItemId=content/aip/journal/apl
Reference19 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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4. Three-dimensionally stacked poly-Si TFT CMOS inverter with high quality laser crystallized channel on Si substrate
5. High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors
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