Mechanism of the growth of microcrystalline silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106804
Reference9 articles.
1. Role of Surface and Growth-Zone Reactions in the Formation Process of µc-Si:H
2. Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing
3. Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the “Chemical Annealing”
4. Very Stable a-Si:H Prepared by “Chemical Annealing”
5. Effects of hydrogen atoms on the network structure of hydrogenated amorphous and microcrystalline silicon thin films
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1. Hydrogen evolution during deposition of microcrystalline silicon by chemical transport;Philosophical Magazine;2008-01-21
2. Deposition of nanocrystalline silicon films at room temperature;Journal of Applied Physics;2007-08-15
3. Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique;Journal of Physics D: Applied Physics;2004-06-17
4. Role of growth temperature and the presence of dopants in layer-by-layer plasma deposition of thin microcrystalline silicon (μc-Si:H) doped layers;Journal of Applied Physics;2004-06-15
5. Poly-Si TFTs by Direct Deposition Methods;Thin Film Transistors;2004
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