Role of growth temperature and the presence of dopants in layer-by-layer plasma deposition of thin microcrystalline silicon (μc-Si:H) doped layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1745122
Reference23 articles.
1. Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications
2. Hot-Wire CVD Poly-Silicon Films for Thin Film Devices
3. Incorporation and thermal stability of hydrogen in amorphous silicon and germanium
4. Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
5. Temperature dependence of the crystallite size and crystalline fraction of microcrystalline silicon deposited from silane by plasma CVD
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