Intrinsic crystalline-to-amorphous transition above 400°C in plasma-deposited Si thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2426905
Reference17 articles.
1. Photovoltaic Technology: The Case for Thin-Film Solar Cells
2. Effects of embedded crystallites in amorphous silicon on light-induced defect creation
3. A Significant Reduction of Impurity Contents in Hydrogenated Microcrystalline Silicon Films for Increased Grain Size and Reduced Defect Density
4. Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
5. Temperature dependence of the crystallite size and crystalline fraction of microcrystalline silicon deposited from silane by plasma CVD
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1. Study of deposition temperature on high crystallinity nanocrystalline silicon thin films with in-situ hydrogen plasma-passivated grains;Thin Solid Films;2015-12
2. Transmission Characteristics of Hydrogenated Microcrystalline Silicon Wire Waveguide at a Wavelength of 1.55 $\mu$m;Applied Physics Express;2012-07-13
3. Role of oxygen impurities in etching of silicon by atomic hydrogen;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-05
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