Poly-Si TFTs by Direct Deposition Methods
Reference37 articles.
1. R. Kakkad, J. Smith, W. S. Lau, S. J. Fonash, and R. Kerns, “Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon,” J. Appl. Phys., 65, 2069 (1989). 2. H. Y. Kim, J. B. Choi, and J. Y. Lee, “Effects of silicon-hydrogen bond characteristics on the crystallization of hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition,” J Vac. Sci Technol. A,17, 3240 (1999). 3. J. R. Heath, S. M. Gates, and C. A. Chess, “Nanocrystal seeding: A low temperature route to polycrystalline Si films,” Appl. Phys. Lett., 64, 3569 (1994). 4. T. Matsumoto, Y. Nagahiro, Y. Nasu, K. Oki, and M. Okabe, “Crystallization at initial stage of low-temperature polycrystalline silicon growth using ZnS buffer layer with <111> preferred orientation,” Appl. Phys. Lett.,65, 1549 (1994). 5. Y. H. Yang and J. R. Abelson, “Growth of polycrystalline silicon at 470°C by magnetron sputtering onto a sputtered µc-hydrogenated silicon seed layer,” Appl. Phys. Lett., 67, 3623 (1995).
|
|