Growth of polycrystalline silicon at 470 °C by magnetron sputtering onto a sputtered μc‐hydrogenated silicon seed layer-Reference-Cited by-同舟云学术

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Growth of polycrystalline silicon at 470 °C by magnetron sputtering onto a sputtered μc‐hydrogenated silicon seed layer

Published:1995-12-11 Issue:24 Volume:67 Page:3623-3625
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Y. H.,Abelson J. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115338

Reference11 articles.

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of an External Magnetic Field on the Growth of Nanocrystalline Silicon Films Grown by MF Magnetron Sputtering;Journal of Materials Science & Technology;2012-11

2. Nanocrystalline silicon thin films grown by a MF twin magnetron sputtering system with two solenoid coils;Materials Letters;2012-02

3. Post hydrogenation effect by hot wire method on poly-crystalline silicon based devices;Journal of Non-Crystalline Solids;2004-06

4. Controlled growth of high-quality poly-silicon thin films with huge grains on glass substrates using an excimer laser;Journal of Crystal Growth;2004-01

5. Poly-Si TFTs by Direct Deposition Methods;Thin Film Transistors;2004

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