Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors-Reference-Cited by-同舟云学术

Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors

Published:2004-07 Issue:1-3 Volume:27 Page:293-296
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Aubry R.,Dua C.,Jacquet J.-C.,Lemaire F.,Galtier P.,Dessertenne B.,Cordier Y.,DiForte-Poisson M. -A.,Delage S. L.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.epjap.org/10.1051/epjap:2004055/pdf

Reference4 articles.

1. Thermal design studies of high-power heterojunction bipolar transistors

2. D. H. Smith, A. Fraser, J. O'Neil, Measurement and prediction of operating Temperatures for GaAs Ics,Semi-Therm 86 Symposium Scottsdale, Arisona, December 9–11, 1986, pp. 1–20

3. Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

4. Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

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