Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths-Reference-Cited by-同舟云学术

Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths

Author:

Sanson A.¹,Giarola M.²,Napolitani E.³,Impellizzeri G.⁴,Privitera V.⁴,Carnera A.¹,Mariotto G.²

Affiliation:

1. Dipartimento di Fisica e Astronomia ‘G. Galilei’; Università di Padova; Via Marzolo 8 I-35131 Padova Italy

2. Dipartimento di Informatica; Università di Verona; Strada Le Grazie 15 I-37134 Verona Italy

3. CNR-IMM MATIS at Dipartimento di Fisica e Astronomia; Università di Padova; Via Marzolo 8 I-35131 Padova Italy

4. CNR-IMM MATIS at Dipartimento di Fisica e Astronomia; Università di Catania; Via S. Sofia 64 I-95123 Catania Italy

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

Reference21 articles.

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