Determination of the diffusion length and the optical self absorption coefficient using EBIC model
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.epjap.org/10.1051/epjap:2001192/pdf
Reference23 articles.
1. Injected Current Carrier Transport in a Semi‐Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination Velocities
2. Cathodoluminescence at p‐n Junctions in GaAs
3. Measurement of the Lifetime of Minority Carriers in Semiconductors with a Scanning Electron Microscope
4. Response of Si and GaP p‐n Junctions to a 5‐ to 40‐keV Electron Beam
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron beam energy and Ge nanocrystal size effects on the minority carrier diffusion length measured by the nano-electron beam induced current technique;Journal of Applied Physics;2011-07-15
2. Application of nano-EBIC to the characterization of GaAs and InP homojunctions;Nanotechnology;2008-03-12
3. XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation;Applied Surface Science;2006-09
4. Electron beam-induced current investigation of GaN Schottky diode;Journal of Electronic Materials;2005-07
5. Minority carrier diffusion lengths and optical self-absorption coefficient in undoped GaN;physica status solidi (b);2003-11
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