Electron beam energy and Ge nanocrystal size effects on the minority carrier diffusion length measured by the nano-electron beam induced current technique-Reference-Cited by-同舟云学术

Electron beam energy and Ge nanocrystal size effects on the minority carrier diffusion length measured by the nano-electron beam induced current technique

Published:2011-07-15 Issue:2 Volume:110 Page:024514
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Doan Quang-Tri,El Hdiy Abdelillah,Troyon Michel

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3614527

Reference31 articles.

1. Enhancing electron beam induced current images

2. Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current technique

3. Determination of minority‐carrier diffusion length by integral properties of electron‐beam‐induced current profiles

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