XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation-Reference-Cited by-同舟云学术

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XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation

Published:2006-09 Issue:22 Volume:252 Page:7890-7894
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Benamara Z.,Mecirdi N.,Bouiadjra B. Bachir,Bideux L.,Gruzza B.,Robert C.,Miczek M.,Adamowicz B.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. A study of the nitridation process on GaAs (001) surface by rf-N plasma irradiation

2. Photoluminescence and capacitance–voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

3. In SituSurface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors

4. In-SituCharacterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy

5. Nitridation of GaAs(1 0 0) substrates and Ga/GaAs systems studied by XPS spectroscopy

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1. Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range;Materials;2021-10-09

2. Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process;Journal of Alloys and Compounds;2021-09

3. A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2020-01-10

4. Comparative study of ionic bombardment and heat treatment on the electrical behavior of Au/GaN/n-GaAs Schottky diodes;Superlattices and Microstructures;2019-11

5. Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode;Semiconductors;2018-12

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