A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range
Author:
Affiliation:
1. Laboratoire de Microélectronique AppliquéeUniversité de Sidi Bel Abbès Sidi Bel Abbes Algeria
2. Laboratoire de Micro‐optoélectronique et NanostructuresUniversité de Monastir, Faculté des Sciences Monastir Monastir Tunisia
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2714
Reference40 articles.
1. Electrical characterization of Au/n-GaN Schottky diodes
2. 2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit
3. Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
4. 50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V
5. Thin-film GaN Schottky diodes formed by epitaxial lift-off
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