Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process-Reference-Cited by-同舟云学术

Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process

Published:2021-09 Issue: Volume:876 Page:159596
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Kacha Arslane Hatem,Anani Macho,Akkal Boudali,Benamara Zineb,Monier Guillaume,Mehdi Hussein^ORCID,Varenne Christelle,Ndiaye Amadou,Robert-Goumet Christine

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference33 articles.

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3. Schottky diode performance of an Au/Pd/GaAs device fabricated by deposition of monodisperse palladium nanoparticles over a p-type GaAs substrate;Deniz;Mater. Sci. Semicond. Process.,2014

4. Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer;Lu;Microelectron. Reliab.,2016

5. Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process;Biber;J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct.,2002

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