Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/p-Si Schottky Contact Parameters;Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi;2024-03-01
2. Thermal sensitivity and current-voltage-temperature characteristics in Pt/epitaxy n-Si/n+Si structures as a function of Schottky contact area;Journal of Vacuum Science & Technology B;2022-09
3. Effects of measurement temperature and metal thickness on Schottky diode characteristics;Physica B: Condensed Matter;2021-09
4. Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process;Journal of Alloys and Compounds;2021-09
5. Determining the potential barrier presented by the interfacial layer from the temperature induced I–V characteristics in Al/p-Si Structure with native oxide layer;Materials Science in Semiconductor Processing;2021-04
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