Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode-Reference-Cited by-同舟云学术

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Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode

Published:2018-12 Issue:16 Volume:52 Page:1998-2006
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Rabehi A.,Amrani M.,Benamara Z.,Akkal B.,Ziane A.,Guermoui M.,Hatem-Kacha A.,Monier G.,Gruzza B.,Bideux L.,Robert-Goumet C.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S106378261816025X/fulltext.html

Reference31 articles.

1. W. R. Wampler and S. M. Myers, J. Appl. Phys. 117, 045707 (2015).

2. D. M. Kim, D. H. Kim, and S. Y. Lee, Solid-State Electron. 51, 865 (2007).

3. W. Wang, G. Lee, M. Huang, R. M. Wallace, and K. Cho, J. Appl. Phys. 107, 103720 (2010)

4. L. Bideux, G. Monier, V. Matolin, C. Robert-Goumet, and B. Gruzza, Appl. Surf. Sci. 254, 4150 (2008).

5. Q. J. Xu, X. M. Ding, X. Y. Hou, and X. Wang, Appl. Surf. Sci. 104, 468 (1996).

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