Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of c urrent‐voltage-Reference-Cited by-同舟云学术

Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of c urrent‐voltage

Published:2021-05-31 Issue:6 Volume:34 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Helal Hicham¹^ORCID,Benamara Zineb¹,Arbia Marwa Ben²,Rabehi Abdelaziz¹³^ORCID,Chaouche Abdallah Chabane⁴,Maaref Hassen²

Affiliation:

1. Laboratoire de Microélectronique Appliquée Université de Sidi Bel Abbès Sidi Bel Abbès Algeria

2. Laboratoire de Micro‐optoélectronique et Nanostructures, Faculté des Sciences Monastir Université de Monastir Monastir Tunisia

3. Institute of Science and Technology Tissemsilt University Center Tissemsilt Algeria

4. Applied Materials Laboratory, Research Center (CFTE) Sidi Bel Abbès Djillali Liabes University Sidi Bel Abbès Algeria

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

Reference33 articles.

4. Simulation and experimental studies of illumination effects on the current transport of nitridated GaAs Schottky diode;Rabehi A;Sem Ther,2018

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