Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode-Reference-Cited by-同舟云学术

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Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode

Published:2015-09-30 Issue:1 Volume:72 Page:10102
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Rabehi Abdelaziz,Amrani Mohamed,Benamara Zineb,Akkal Boudali,Hatem-Kacha Arslane,Robert-Goumet Christine,Monier Guillaume,Gruzza Bernard

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://epjap.epj.org/10.1051/epjap/2015150140/pdf

Reference26 articles.

1. Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors

2. An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications

3. XPS study of the formation of ultrathin GaN film on GaAs(100)

4. Nitridation of GaAs surfaces stimulated by nitrogen glow discharge

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1. Accurate parameter estimation of Au/GaN/GaAs schottky diode model using grey wolf optimization;Revista Mexicana de Física;2024-03-01

2. Improved electrical characteristics of AlxGa1−xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters;Revista Mexicana de Física;2023-07-04

3. Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices;Revista Mexicana de Física;2023-05-01

4. Effect of the contact area on the electrical characteristics of the Ti/6H–SiC (n) Schottky diode;Micro and Nanostructures;2023-01

5. A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height;EUR PHYS J PLUS;2022

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