Effect of the contact area on the electrical characteristics of the Ti/6H–SiC (n) Schottky diode
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials
Reference40 articles.
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3. Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature;Altındal;J. Mater. Sci. Mater. Electron.,2022
4. "An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and traps.";Lee,2012
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An experimental study: Dependence of Schottky diode parameters on Schottky contact area size;Optical Materials;2023-08
2. Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes;Journal of Vacuum Science & Technology B;2023-03
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