Etching of low-k materials in high density fluorocarbon plasma
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2004195/pdf
Reference23 articles.
1. Low dielectric constant materials for microelectronics
2. Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition
3. Integration of Cu/SiOC in Cu dual damascene interconnect for 0.1-μm technology
4. Integration challenges of porous ultra low-k spin-on dielectrics
5. Integration of Cu and low-k dielectrics: effect of hard mask and dry etch on electrical performance of damascene structures
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3. Effects of He and Ar ion kinetic energies in protection of organosilicate glass from O2 plasma damage;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-07
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