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Etching kinetics and dielectric properties of SiOC films exposed to Ar and CF4 plasmas

  • Published:2022-05 Issue: Volume:749 Page:139185
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Oh Younghun,Efremov Alexander,Lee Junmyung,Lee Jongchan,Choi Yeonsik,Kwon Kwang-Ho

Funder

Ministry of Trade, Industry and Energy

Korea Institute of Energy Technology Evaluation and Planning

Korea University

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Low dielectric constant materials for microelectronics;Maex;J. Appl. Phys.,2003

2. Interconnect scaling-the real limiter to high performance ULSI;Bohr,1995

3. Chemical bonding structure in porous SiOC films (k< 2.4) with high plasma-induced damage resistance;Miyajima;Micro Nano Eng.,2019

4. Plasma enhanced chemical vapor deposition of low dielectric constant SiOC (–H) films using MTES/O2 precursor;Navamathavan;Thin Solid Films,2007

5. Low-damage low-k etching with an environmentally friendly CF3I plasma;Soda;J. Vacuum Sci. Technol. A: Vacuum, Surf. Films,2008

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